Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC005
1. Applications
• High-Speed High-Voltage Switching
• Switching Voltage Regulators
• High-Speed DC-DC Converters
2. Features
(1) High DC current gain: hFE = 100 to 200 (IC = 0.1 A)
(2) High-speed switching: tf = 0.13 µs (typ.) (IC = 0.3 A)
3. Packaging and Internal Circuit
TTC005
1. Base
2. Collector (Heatsink)
3. Emitter
PW-Mini
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
VCBO
600
V
VCEX
600
Collector-emitter voltage
VCEO
285
Emitter-base voltage
Collector current (DC)
Collector current (pulsed)
Base current
Collector power dissipation
Collector power dissipation
(t = 10 s)
DC
(Note 1)
(Note 1)
(Note 2)
(Note 2)
VEBO
IC
ICP
IB
PC
8
1
A
2
0.5
2.8
W
1.1
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150.
Note 2: Device mounted on a 25.4 mm x 25.4 mm x 1.6 mm FR-4 glass epoxy board (with a dissipating copper surface
of 645 mm2)
©2015 Toshiba Corporation
1
Start of commercial production
2009-01
2015-11-09
Rev.3.0
