(1) High DC current gain: hFE = 100 to 200 (IC = 0.1 A) (2) High-speed switching: tf = 0.13 µs (typ. ) (IC = 0.3 A)
3. Packaging and Internal Circuit
TTC005
1. Base 2. Collector (Heatsink) 3. Emitter
PW-Mini
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage
VCBO
600
V
VCEX
600
Collector-emitter voltage
VCEO
285
Emitter-base voltage Collector current (DC) Collector current.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC005
1. Applications
• High-Speed High-Voltage Switching • Switching Voltage Regulators • High-Speed DC-DC Converters
2. Features
(1) High DC current gain: hFE = 100 to 200 (IC = 0.1 A) (2) High-speed switching: tf = 0.13 µs (typ.) (IC = 0.3 A)
3. Packaging and Internal Circuit
TTC005
1. Base 2. Collector (Heatsink) 3. Emitter
PW-Mini
4.
TTC005 Datasheet
