TTC3710B - NPN Transistor

Datasheet Summary

Features

(1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A) (2) High speed switching: tstg = 1 µs (typ. ) (3) Complementary to TTA1452B 3. Packaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collec.

Toshiba

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Datasheet Details

Part number	TTC3710B
Manufacturer	Toshiba
File Size	250.84 KB
Description	NPN Transistor
Datasheet	TTC3710B Datasheet
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Bipolar Transistors Silicon NPN Epitaxial Type TTC3710B TTC3710B 1. Applications • High-Current Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A) (2) High speed switching: tstg = 1 µs (typ.) (3) Complementary to TTA1452B 3. Packaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4.

Published: Jan 20, 2021 |