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Toshiba Electronic Components Datasheet

TTC3710B Datasheet

NPN Transistor

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Bipolar Transistors Silicon NPN Epitaxial Type
TTC3710B
TTC3710B
1. Applications
• High-Current Switching
2. Features
(1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A)
(2) High speed switching: tstg = 1 µs (typ.)
(3) Complementary to TTA1452B
3. Packaging and Internal Circuit
1. Base
2. Collector
3. Emitter
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (pulsed)
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Mounting torque
(Tc = 25 )
(Note 1)
(Note 1)
VCBO
VCEO
VEBO
IC
ICP
IB
PC
PC
Tj
Tstg
TOR
80
80
6
12
15
2
2
30
150
-55 to 150
0.6
V
A
W
Nm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
Start of commercial production
2012-09
1
2014-11-06
Rev.3.0


Toshiba Electronic Components Datasheet

TTC3710B Datasheet

NPN Transistor

No Preview Available !

5. Electrical Characteristics
5.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
ICBO VCB = 80 V, IE = 0 A
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0 A
Collector-emitter breakdown voltage
V(BR)CEO IC = 50 mA, IB = 0 A
80
DC current gain
hFE(1) VCE = 1 V, IC = 1 A
120
hFE(2) VCE = 1 V, IC = 6 A
40
Collector-emitter saturation voltage
VCE(sat) IC = 6 A, IB = 0.3 A
Base-emitter saturation voltage
VBE(sat) IC = 6 A, IB = 0.3 A
5.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Transition frequency
Collector output capacitance
Switching time (turn-on time)
Switching time (storage time)
Switching time (fall time)
Symbol
Test Condition
Min
fT
VCE = 5 V, IC = 1 A
Cob
VCB = 10 V, IE = 0 A, f = 1 MHz
ton
See Figure 5.2.1.
tstg
VCC 30 V, RL = 5 ,
IB1 = IB2 = 0.3 A,
tf
Duty cycle 1%
TTC3710B
Typ. Max Unit
5
µA
5
V
240
0.16 0.4
V
0.87 1.2
Typ. Max Unit
80
MHz
220
pF
0.2
µs
1.0
0.2
6. Marking (Note)
Fig. 5.2.1 Switching Time Test Circuit
Fig. 6.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2014-11-06
Rev.3.0


Part Number TTC3710B
Description NPN Transistor
Maker Toshiba
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TTC3710B Datasheet PDF






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