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XPH3R304PB Datasheet - Toshiba

Silicon N-Channel MOSFET

XPH3R304PB Features

* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit XPH3R304PB SOP Advan

XPH3R304PB Datasheet (563.58 KB)

Preview of XPH3R304PB PDF

Datasheet Details

Part number:

XPH3R304PB

Manufacturer:

Toshiba ↗

File Size:

563.58 KB

Description:

Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS -H) XPH3R304PB 1. Applications Automotive Motor Drivers Switching Voltage Regul.

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XPH3R304PB Silicon N-Channel MOSFET Toshiba

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