XPHR9904PS Datasheet | Toshiba

Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.76 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 m A) 3. Packaging and Internal Circuit SOP Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2022-2023 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2023-07 2023-09-08 Rev.2.0 4. Absolute Maximum Ratings (Note) (Ta = 25 - unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (Tc = 25 - ) (t = 10 s) (Note 1) (Note 1) (Note 2) VDSS VGSS ID IDP PD ±20 Power dissipation (t = 10 s) (Note 3) Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature (Note 4) (Note 5) Tch (Note 5) Tstg 171 m...