* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 5.4 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit XPN6R706NC TSON Adva
XPN6R706NC Datasheet (561.27 KB)
XPN6R706NC
561.27 KB
N-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) XPN6R706NC 1. Applications Automotive Switching Voltage Regulators DC-DC Conver.
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