1SS190 Datasheet - Toshiba Semiconductor

1SS190 Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Ultra High Speed Switching Application AEC-Q101 Qualified (Note1) Small package : SC-59 Low forward voltage : VF (3) = 0.92 V (typ.) Fast reverse recovery time : trr = 1.6 ns (typ.) Small total capacitance : CT = 2.2 pF (typ.) Note1: For detail information, please contact our sales. 1SS190 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V.

1SS190_ToshibaSemiconductor.pdf