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Toshiba Electronic Components Datasheet

1SS314 Datasheet

SILICON EPITAXIAL PLANAR DIODE

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TOSHIBA Diode Silicon Epitaxial Planar Type
1SS314
1SS314
VHF Tuner Band Switch Applications
Small package.
Small total capacitance: CT = 1.2 pF (max)
Low series resistance: rs = 0.5 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR 30 V
IF 100 mA
Tj 125 °C
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Reverse voltage
Total capacitance
Series resistance
Symbol
VF
IR
VR
CT
rs
Test Condition
IF = 2 mA
VR = 15 V
IR = 1 μA
VR = 6 V, f = 1 MHz
IF = 2 mA, f = 100 MHz
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
Min Typ. Max Unit
⎯ ⎯ 0.85 V
⎯ ⎯ 0.1 μA
30 ⎯ ⎯
V
0.7 1.2 pF
0.5 0.9 Ω
Start of commercial production
1987-05
1 2014-03-01


Toshiba Electronic Components Datasheet

1SS314 Datasheet

SILICON EPITAXIAL PLANAR DIODE

No Preview Available !

1SS314
2 2014-03-01


Part Number 1SS314
Description SILICON EPITAXIAL PLANAR DIODE
Maker Toshiba Semiconductor
Total Page 3 Pages
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