1SS349 - Silicon Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS349
Manufacturer	Toshiba Semiconductor
File Size	193.56 KB
Description	Silicon Diode
Datasheet	1SS349 Datasheet
Additional preview pages of the 1SS349 datasheet.

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TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS349 Ultra High Speed Switching Application z Low forward voltage z Low reverse current z Small package : VF (3) = 0.49V (typ.) : IR = 50μA (max) : SC−59 1SS349 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 3000 mA Average forward current Power dissipation IO 1000 mA P 200 mW Junction temperature Tj 125 °C Storage temperature Operating Temperature Tstg −55∼125 °C JEDEC Topr −40∼100 °C JEITA TD−236MOD SC−59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 1−3G1B temperature/current/voltage and the significant change in temperature, etc.

Published: Mar 23, 2005 |