1SS404 - Silicon Epitaxial Schottky Barrier Type Diode

Toshiba Semiconductor

Datasheet Details

Part number	1SS404
Manufacturer	Toshiba
File Size	126.29 KB
Description	Silicon Epitaxial Schottky Barrier Type Diode
Datasheet	1SS404 Datasheet
Additional preview pages of the 1SS404 datasheet.

📁 Similar Datasheet

1SS404 - High Speed Switching Diode (MCC)
1SS404 - HIGH SPEED SWITCHING DIODES (Rectron)
1SS404 - SURFACE MOUNT SCHOTTKY BARRIER DIODE (WON-TOP)
1SS404 - Silicon Epitaxial Planar Diode (GME)
1SS404 - High Speed SWITCHING Diodes (Jiangsu Changjiang)
1SS400 - SURFACE MOUNT FAST SWITCHING DIODE (LITE-ON)
1SS400 - High speed Switching Diode (GME)
1SS400 - SURFACE MOUNT FAST SWITCHING DIODE (WON-TOP)
1SS400 - Switching Diode (ROHM)
1SS400 - 200mW SURFACE MOUNT SWITCHING DIODES (TIPTEK)

Other Datasheets by Toshiba Semiconductor

1SS401 - Silicon Diode
1SS402 - Diode
1SS403 - Silicon Epitaxial Planar Type diode
1SS104 - SILICON DIODE
1SS154 - Silicon Epitaxial Schottky Barrier Type Diode
1SS181 - Silicon Epitaxial Planar Type Diode
1SS184 - Silicon Epitaxial Planar Type Diode
1SS187 - Silicon Epitaxial Planar Type Diode

Full PDF Text Transcription

Click to expand full text

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS404 1SS404 High Speed Switching Applications • Two-pin small packages are suitable for higher mounting densities • Low forward voltage : VF (3) = 0.38 V (typ.) • Low reverse current: IR = 50 μA (max) • Small total capacitance: CT = 46 pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristics Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Power dissipation VRM VR IFM IO P 25 V 20 V 700 mA 300 mA 200 (Note 1) mW USC Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC ― Operating temperature range Topr −40 to 100 °C JEITA ― Note: Using continuously under heavy loads (e.g.

Published: May 5, 2009 |