900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

2SA1091 Datasheet

TRANSISTOR (HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY/ NIXIE TUBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL)

No Preview Available !

TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1091
2SA1091
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 6 pF (typ.)
Complementary to 2SC2551.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO 8 V
Collector current
IC
100
mA
Base current
Collector power dissipation
Junction temperature
Storage temperature range
IB 20 mA
PC 400 mW
Tj 150 °C
Tstg
55~150
°C
JEDEC
JEITA
TOSHIBA
TO-92
SC-43
2-5F1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.21 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CBO
V (BR) CEO
VCB = −300 V, IE = 0
VEB = −8 V, IC = 0
IC = −0.1 mA, IE = 0
IC = −1 mA, IB = 0
hFE (1)
VCE = −10 V, IC = −20 mA
(Note)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = −10 V, IC = −1 mA
IC = −20 mA, IB = −2 mA
IC = −20 mA, IB = −2 mA
VCE = −10 V, IC = −20 mA
VCB = −20 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 30~90 O: 50~150
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
300
V
300
V
30 150
20 ⎯ ⎯
⎯ ⎯ −0.5 V
⎯ ⎯ −1.2 V
40 60 MHz
6
8 pF
1 2007-11-01


Toshiba Electronic Components Datasheet

2SA1091 Datasheet

TRANSISTOR (HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY/ NIXIE TUBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL)

No Preview Available !

2SA1091
2 2007-11-01


Part Number 2SA1091
Description TRANSISTOR (HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY/ NIXIE TUBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL)
Maker Toshiba Semiconductor
Total Page 4 Pages
PDF Download

2SA1091 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 2SA109 (2SAxxx) Transistors
Toshiba
2 2SA1090 (2SAxxx) Transistors
Toshiba
3 2SA1091 TRANSISTOR (HIGH VOLTAGE CONTROL APPLICATIONS PLASMA DISPLAY/ NIXIE TUBE DRIVER/ CATHODE RAY TUBE BRIGHTNESS CONTROL)
Toshiba Semiconductor
4 2SA1091 Silicon PNP transistor
BLUE ROCKET ELECTRONICS
5 2SA1091 SILICON PNP TRANSISTOR
LZG
6 2SA1093 SILICON PNP EPITAXIAL TYPE TRANSISTOR
Toshiba
7 2SA1093 SILICON POWER TRANSISTOR
SavantIC
8 2SA1093 POWER TRANSISTOR
Inchange Semiconductor
9 2SA1093 Trans GP BJT PNP 60V 2A 3-Pin TO-126B-A1
New Jersey Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy