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2SA1090 Toshiba (https://www.toshiba.com/) Silicon PNP transistor

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Description : 2SA1090 I2 ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Breakdown Voltage : VCECP-50V (Kin.), Veb'0=-8V (Min.) • High Gain and Excellent hps Linearity : hFE=70 ~ 400 at Vce=-1V, I c=-10mA • Complementary to 2SC2550. Unit in mm 05.8UkX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC C...
Features
• High Breakdown Voltage : VCECP-50V (Kin.), Veb'0=-8V (Min.)
• High Gain and Excellent hps Linearity : hFE=70 ~ 400 at Vce=-1V, I c=-10mA
• Complementary to 2SC2550. Unit in mm 05.8UkX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Di...

Datasheet PDF File 2SA1090 Datasheet - 132.23KB
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