* High Breakdown Voltage : VCECP-50V (Kin.), Veb'0=-8V (Min.)
* High Gain and Excellent hps Linearity : hFE=70 ~ 400 at Vce=-1V, I c=-10mA
* Complementary to 2SC2550. Unit in mm 05.8UkX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage Collector-Emitter Volt
2SA1090
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Silicon pnp transistor.
: 2SA1090 I2 ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPL.
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