2SA1200
2SA1200 is SILICON PNP TRIPLE DIFFUSED TRANSISTOR manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
High Voltage Switching Applications
- High voltage: VCEO =
- 150 V
- High transition frequency: f T = 120 MHz (typ.)
- Small flat package
- PC = 1 to 2 W (mounted on ceramic substrate)
- plementary to 2SC2880
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Collector power dissipation
VCBO VCEO VEBO
IC IB PC PC (Note 1)
- 150
- 150
- 5
- 50
- 10 500
V V V m A m A m W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
Note 1: 2SA1200 mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit:...
