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2SA1200 - SILICON PNP TRIPLE DIFFUSED TRANSISTOR

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Part number 2SA1200
Manufacturer Toshiba Semiconductor
File Size 112.20 KB
Description SILICON PNP TRIPLE DIFFUSED TRANSISTOR
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TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = −150 V · High transition frequency: fT = 120 MHz (typ.) · Small flat package · PC = 1 to 2 W (mounted on ceramic substrate) · Complementary to 2SC2880 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note 1) −150 −150 −5 −50 −10 500 800 V V V mA mA mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C Note 1: 2SA1200 mounted on ceramic substrate (250 mm2 × 0.8 t) Unit: mm PW-MINI JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
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