2SA1244 - PNP Transistor

Toshiba Semiconductor

Datasheet Details

Part number	2SA1244
Manufacturer	Toshiba Semiconductor
File Size	163.22 KB
Description	PNP Transistor
Datasheet	2SA1244 Datasheet
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications 2SA1244 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −5 A Base current IB −1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 1.0 W 20 Junction temperature JEDEC ― Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEITA ― Note: Using continuously under heavy loads (e.g.

Published: Mar 22, 2005 |