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2SA1244 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1244.

General Description

·With TO-251(IPAK) packaging ·High speed switching time ·Low collector saturation voltage ·Complement to type 2SC3074 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC IB PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ TC=25℃ Junction Temperature -60 V -50 V -5 V -5 A -1 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1244 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;

IB= -0.15A VBE(sat) Base-Emitter Saturation Voltage IC= -3A;

IB= -0.15A V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;

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