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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1244
High Current Switching Applications
2SA1244
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−5
A
Base current
IB
−1
A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
20
Junction temperature
JEDEC
―
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g.
2SA1244 Datasheet
