2SA1245 Datasheet | Toshiba

TOSHIBA Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -15 -8 -2 -30 -15 150 125 -55~125 Unit V V V m A m A m W °C °C Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition Min Typ. Max Unit f T VCE = -5 V, IC = -10 m A ¾ 4 ¾ GHz ïS21eï2 (1) VCE = -5 V, IC = -10 m A, f = 500 MHz ¾ ¾ d B ïS21eï2 (2) VCE = -5 V, IC = -10 m A, f = 1 GHz ¾ 9.5 ¾ NF (1) NF (2) VCE = -5 V, IC = -3 m A, f = 500 MHz VCE = -5 V, IC = -3 m A, f = 1 GHz ¾ 2.5 ¾ ¾ 3.0 ¾ d B Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test...