2SA1241 - Silicon PNP Transistor

Toshiba

Key Features

(1) Low collector-emitter saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1.0 A, IB = -50 mA) (2) High-speed switching: tstg = 1.0 µs (typ. ) (3) Complementary to 2SC3076 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 Emitter-base voltage VEBO -5 Collecto.

2SA1241 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA1241
Manufacturer	Toshiba
File Size	326.64 KB
Description	Silicon PNP Transistor
Datasheet	2SA1241 Datasheet

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Bipolar Transistors Silicon PNP Epitaxial Type 2SA1241 2SA1241 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector-emitter saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1.0 A, IB = -50 mA) (2) High-speed switching: tstg = 1.0 µs (typ.) (3) Complementary to 2SC3076 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4.