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2SA1241 Datasheet Silicon PNP Transistor

Manufacturer: Toshiba

Overview: Bipolar Transistors Silicon PNP Epitaxial Type 2SA1241 2SA1241 1. Applications • Power Amplifiers • Power Switching 2.

Key Features

  • (1) Low collector-emitter saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1.0 A, IB = -50 mA) (2) High-speed switching: tstg = 1.0 µs (typ. ) (3) Complementary to 2SC3076 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 Emitter-base voltage VEBO -5 Collecto.

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