2SA1242 Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications 2SA1242 Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A).
| Part number | 2SA1242 |
|---|---|
| Datasheet | 2SA1242_ToshibaSemiconductor.pdf |
| File Size | 155.18 KB |
| Manufacturer | Toshiba |
| Description | Silicon PNP Transistor |
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications 2SA1242 Unit: mm Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A).
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1242 | PNP Transistor | JCET |
| 2SA1242 | Silicon PNP Power Transistor | Inchange Semiconductor | |
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2SA1242 | PNP Transistor | LGE |
| Part Number | Description |
|---|---|
| 2SA1241 | Silicon PNP Transistor |
| 2SA1244 | PNP Transistor |
| 2SA1245 | Silicon PNP Epitaxial Planar Transistor |
| 2SA1200 | SILICON PNP TRIPLE DIFFUSED TRANSISTOR |
| 2SA1201 | Silicon PNP Transistor |
| 2SA1202 | Silicon PNP Transistor |
| 2SA1203 | Silicon PNP Transistor |
| 2SA1213 | Silicon PNP Transistor |
| 2SA1225 | Silicon PNP Transistor |
| 2SA1255 | SILICON PNP TRIPLE DIFFUSED TRANSISTOR |