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2SA1242 - Silicon PNP Transistor

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Datasheet Details

Part number 2SA1242
Manufacturer Toshiba
File Size 155.18 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA1242 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Medium Power Amplifier Applications 2SA1242 Unit: mm • Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low collector saturation voltage : VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) • High power dissipation : PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed (Note 1) Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −35 −20 −8 −5 −8 −0.5 1.