900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

2SA2219 Datasheet

Transistor Silicon PNP Epitaxial Type

No Preview Available !

DataSheet.in
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2219
2SA2219
Audio Frequency Amplifier Applications
High collector voltage
: VCEO = 160 V (min)
Small collector output capacitance : Cob = 17pF (typ.)
High transition frequency
: fT = 100MHz (typ.)
Complementary to 2SC6139
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
DC
Pulse
VCBO
VCEO
VEBO
IC
ICP
IB
Pc
-160
-160
-6
-1.5
-2.5
-0.5
1
V
V
V
A
A
A
W
Junction temperature
Storage temperature range
Tj 150 °C
Tstg -55 to 150 °C
JEDEC
JEITA
Note 1: Ensure that the channel temperature does not exceed 150°C
TOSHIBA
2-7D101A
during use of the device.
Weight : 0.2 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-09-28


Toshiba Electronic Components Datasheet

2SA2219 Datasheet

Transistor Silicon PNP Epitaxial Type

No Preview Available !

DataSheet.in
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
fT
VCB = -160V, IE = 0
VEB = -6V, IC = 0
IC = -10mA, IB = 0
VCE = -5V, IC = -1mA
VCE = -5V, IC = -0.1A
IC = -0.5A, IB = -50mA
IC = -0.5A, IB = -50mA
VCB = -10V, IC = 0, f = 1MHz
VCE = -10V, IC = -100mA
Marking
2SA2219
Min Typ. Max Unit
⎯ ⎯ -100 nA
⎯ ⎯ -100 nA
-160 ⎯ ⎯ V
80 ⎯ ⎯
140 280
⎯ ⎯ -0.5 V
⎯ ⎯ -1.3 V
17 pF
100 MHz
A2219
Part No. (or abbreviation code)
Lot No.
Note 3
Note 3 : A line under a Lot No. identifies the indication of product Labels.
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-09-28


Part Number 2SA2219
Description Transistor Silicon PNP Epitaxial Type
Maker Toshiba Semiconductor
Total Page 5 Pages
PDF Download

2SA2219 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 2SA2210 PNP Epitaxial Planar Silicon Transistor
Sanyo Semicon Device
2 2SA2210 Bipolar Transistor
ON Semiconductor
3 2SA2210 Silicon PNP Power Transistor
Inchange Semiconductor
4 2SA2219 Transistor Silicon PNP Epitaxial Type
Toshiba Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy