TOSHIBA Transistor Silicon PNP Epitaxial Type
○ Audio Frequency Amplifier Applications
• High collector voltage
: VCEO = －160 V (min)
• Small collector output capacitance : Cob = 17pF (typ.)
• High transition frequency
: fT = 100MHz (typ.)
• Complementary to 2SC6139
Absolute Maximum Ratings (Ta = 25°C)
Collector power dissipation
Storage temperature range
Tj 150 °C
Tstg -55 to 150 °C
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Weight : 0.2 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).