* . High Breakdown Voltage: VcEO="120V (2SA814) : VCEO=-100V (2SA815) . Complementary to 2SC1624 and 2SC1625. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage 2SA814 2SA815 Collector- Emitter Voltage 2SA814 2SA815 Emitter-Base Voltage Collector Current Emitter Current Collecto
2SA814
Toshiba ↗ Semiconductor
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Silicon pnp transistor.
: 2SA814' 2SA81 5, MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SILICON PIMP EPITAXIAL BASE MESA TYPE Unit in mm 10.3 M.
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