Datasheet Details
| Part number | 2SA814 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.12 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA814_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA814.
| Part number | 2SA814 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.12 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA814_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -120(V)(Min.) ·Complement to Type 2SC1624 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA814 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA814 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA814 | (2SA814 / 2SA815) Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
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| 2SA878 | POWER TRANSISTOR |
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