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2SA814 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- :V(BR)CEO= -120(V)(Min.) Complement to Type 2SC1624 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Medium power amplifier applications.

Driver stage amplifier applications.

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isc Silicon PNP Power Transistor 2SA814 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -120(V)(Min.) ·Complement to Type 2SC1624 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.