2SA814 Description
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -120(V)(Min.) ·plement to Type 2SC1624 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications. ·Driver stage amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA814 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO...