• Part: 2SA812
  • Description: Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 210.18 KB
Download 2SA812 Datasheet PDF
Galaxy Microelectronics
2SA812
2SA812 is Silicon Epitaxial Planar Transistor manufactured by Galaxy Microelectronics.
FEATURES z mplementary to 2SC1623. z High DC current gain:h FE=200typ. (VCE=-6.0V,IC=-1.0m A) z High Voltage: VCEO=-50V. Pb Lead-free APPLICATIONS z Audio frequency, general purpose amplifier. ORDERING INFORMATION Type No. Marking M4/M5/M6/M7 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -50 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -100 PC Collector Dissipation Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V m A m W ℃ E010 Rev.A .gmicroelec. 1 Production specification Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX...