2SA812
2SA812 is Silicon Epitaxial Planar Transistor manufactured by Galaxy Microelectronics.
FEATURES z mplementary to 2SC1623. z High DC current gain:h FE=200typ.
(VCE=-6.0V,IC=-1.0m A) z High Voltage: VCEO=-50V.
Pb
Lead-free
APPLICATIONS z Audio frequency, general purpose amplifier.
ORDERING INFORMATION
Type No.
Marking
M4/M5/M6/M7
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-5
IC Collector Current -Continuous
-100
PC Collector Dissipation
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V m A m W ℃
E010 Rev.A
.gmicroelec. 1
Production specification
Silicon Epitaxial Planar Transistor
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX...