JCET 2SA812
PNP Transistor
| Part No. | 2SA812 |
|---|---|
| Datasheet | 2SA812 Download |
| Manufacturer |  JCET |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
z Complementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mmMAXIMUM RATINGS
(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -50 -5 -100 200 150 -55-150 Unit V V V mA mW ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)E