Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
2SA812 TRANSISTOR (PNP)
Features z plementary to 2SC1623 z High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) z High Voltage: Vceo=-50V
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Unit : mm
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -60 -50 -5 -100 200 150
-55-150
Unit V V V mA mW
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter...
