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2SA812QLT1 - General Purpose Transistors

Key Features

  • Package outline.
  • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FE.
  • ALToUwRpErofile surface mounted.

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Datasheet Details

Part number 2SA812QLT1
Manufacturer WILLAS
File Size 517.17 KB
Description General Purpose Transistors
Datasheet download datasheet 2SA812QLT1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WILLAS 2SA812xLTF1MT1H2R0U-M+ 1.0AGSeURnFeArCaE lMPOUuNrTpSoCHsOeTTTKYraBnARsRiIsERtoRErsCTIFIERS -20V- 200V FM1200-M+ SOD-123+ PACKAGE Pb Free Product Features Package outline • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FE•ALToUwRpErofile surface mounted application in order to optimize board space. ƽ•HLigohwVpooltwageer:loVsCsEO, h=ig-5h0eVff.iciency. ƽ•EHpiitgahxiacluprrlaennatrctayppea.bility, low forward voltage drop. SOD-123H 0.146(3.7) 0.130(3.3) ƽ•NHPiNghcosmurpgleemceanpta: 2bSiliCty1.623 ƽ•WGeuaderdcrlainrge ftohratotvheervmoalttaegriealporof pteroctdiuocnt. compliance with RoHS requirements. •PUbl-tFrareheigpha-cskpaegede siswaitvcahiilnagb.