Part 2SA812RLT1
Description General Purpose Transistors
Category Transistor
Manufacturer WILLAS
Size 517.17 KB
WILLAS
2SA812RLT1

Overview

  • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. FE
  • ALToUwRpErofile surface mounted application in order to optimize board space. ƽ
  • HLigohwVpooltwageer:loVsCsEO, h=. ƽ
  • , low forward voltage drop. SOD-123H
  • 146(3.7) 0.130(3.3) ƽ
  • NHPiNghcosmurpgleemceanpta: 2bSiliCty1.623 ƽ
  • WGeuaderdcrlainrge ftohratotvheervmoalttaegriealporof pteroctdiuocnt. compliance with RoHS requirements.
  • PUbl-tFrareheigpha-cskpaegede
  • RSoiHlicSopnreopdiutactxifaolrpplaacnkainr gchciopd, emesutafflixsi”liGco” n junction.
  • HLaeloagde-fnrefreepeaprrtsodmuecet tfoernpvaircokninmgecnotadlesstaunffdixa“rHds” of