2SA812 Description
DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD.
2SA812 Key Features
- plementary to 2SC1623A
- High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0
- High Voltage: VCEO = -50 V
2SA812 Datasheet
| Part number | 2SA812 |
|---|---|
| Download | 2SA812 Datasheet (PDF) |
| File Size | 302.61 KB |
| Manufacturer | NEC |
| Description | PNP Transistor |
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