Datasheet4U Logo Datasheet4U.com

2SA812 - PNP Transistor

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • Complementary to 2SC1623A.
  • High DC Current Gain: hFE = 200 TYP. (VCE =.
  • 6.0 V, IC =.
  • 1.0 mA).
  • High Voltage: VCEO =.
  • 50 V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA812 PNP Transistor WEITRON
2SA812 SOT-23 BIPOLAR TRANSISTORS Rectron
2SA812 PNP Transistor HOTTECH
2SA812 PNP Transistors Kexin
2SA812 PNP Transistor JCET

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SA811A PNP SILICON TRANSISTOR
2SA1006 PNP/NPN TRANSISTOR
2SA1006A PNP/NPN TRANSISTOR
2SA1006B PNP/NPN TRANSISTOR
2SA1009 PNP SIlicon Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50 V Emitter to Base Voltage VEBO −5.