2SA812 Datasheet PDF

FEATURES

High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -50 -5.0 -100 200 150 -55 to +150 Unit V V V mA mW

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage Base to emitter voltage Output capacitance Transition frequency * Pulsed: PW 350 u s, Duty Cycle 2% Symbol Testconditi ons ICBO VCB = -60 V, IE = 0 A IEBO VEB = -5.0 V, IC = 0 A hFE VCE = -6