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2SA814'
2SA81 5,
MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS.
SILICON PIMP EPITAXIAL BASE MESA TYPE
Unit in mm 10.3 MAX. 0Z6±<2
FEATURES . High Breakdown Voltage: VcEO="120V (2SA814)
: VCEO=-100V (2SA815) . Complementary to 2SC1624 and 2SC1625.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector- Base Voltage
2SA814 2SA815
Collector- Emitter Voltage
2SA814 2SA815
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power ,_, „_ _.
_D.issi. pat. x. on
(Tc=25 C)
Junction Temperature Storage Temperature Range
SYMBOL VCBO
VCEO VEBO ic IE Pc
Tj
Tstg
RATING -120 -100 -120 -100 -5 -1
1
15
UNIT V
V V A A W
150
°C
-55VL50 °c
1. BASE 2. COLLECTOR (HEAT SINK) 3. EM ITTER
JEDEC TOSHIBA
T0-220AB SC-46 2-10A1A
Mounting Kit No.
2SA815 Datasheet
