Datasheet Details
| Part number | 2SA815 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.77 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA815_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon PNP Power Transistor 2SA815.
| Part number | 2SA815 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.77 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA815_InchangeSemiconductor.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -100(V)(Min.) ·Complement to Type 2SC1625 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA815 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA815 | Silicon PNP Transistor | Toshiba Semiconductor |
 |
2SA815 | (2SA814 / 2SA815) Silicon POwer Transistors | SavantIC |
| Part Number | Description |
|---|---|
| 2SA814 | POWER TRANSISTOR |
| 2SA818 | Silicon PNP Power Transistors |
| 2SA807 | POWER TRANSISTOR |
| 2SA837 | POWER TRANSISTOR |
| 2SA839 | POWER TRANSISTOR |
| 2SA843 | Silicon PNP Power Transistor |
| 2SA878 | POWER TRANSISTOR |
| 2SA882 | POWER TRANSISTOR |
| 2SA885 | POWER TRANSISTOR |
| 2SA886 | POWER TRANSISTOR |