Datasheet4U Logo Datasheet4U.com

2SA817A - Silicon PNP Epitaxial Type Transistor

📥 Download Datasheet

Datasheet Details

Part number 2SA817A
Manufacturer Toshiba
File Size 116.61 KB
Description Silicon PNP Epitaxial Type Transistor
Datasheet download datasheet 2SA817A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA817A Driver-Stage Amplifier Applications Voltage Amplifier Applications 2SA817A Unit: mm • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IE PC Tj Tstg −80 −80 −5 −400 400 800 150 −55 to 150 V V V mA mA mW °C °C JEDEC TO-92MOD Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in temperature, etc.