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2SA814 - Silicon PNP Transistor

Key Features

  • . High Breakdown Voltage: VcEO="120V (2SA814) : VCEO=-100V (2SA815) . Complementary to 2SC1624 and 2SC1625.

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Datasheet Details

Part number 2SA814
Manufacturer Toshiba
File Size 88.51 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA814 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SA814' 2SA81 5, MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SILICON PIMP EPITAXIAL BASE MESA TYPE Unit in mm 10.3 MAX. 0Z6±<2 FEATURES . High Breakdown Voltage: VcEO="120V (2SA814) : VCEO=-100V (2SA815) . Complementary to 2SC1624 and 2SC1625. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage 2SA814 2SA815 Collector- Emitter Voltage 2SA814 2SA815 Emitter-Base Voltage Collector Current Emitter Current Collector Power ,_, „_ _. _D.issi. pat. x. on (Tc=25 C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IE Pc Tj Tstg RATING -120 -100 -120 -100 -5 -1 1 15 UNIT V V V A A W 150 °C -55VL50 °c 1. BASE 2. COLLECTOR (HEAT SINK) 3. EM ITTER JEDEC TOSHIBA T0-220AB SC-46 2-10A1A Mounting Kit No.