• Part: 2SA815
  • Description: Silicon PNP Transistor
  • Manufacturer: Toshiba
  • Size: 88.51 KB
Download 2SA815 Datasheet PDF
2SA815 page 2
Page 2

Datasheet Summary

: 2SA814' 2SA81 5, MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SILICON PIMP EPITAXIAL BASE MESA TYPE Unit in mm 10.3 MAX. 0Z6±<2 Features . High Breakdown Voltage: VcEO="120V (2SA814) : VCEO=-100V (2SA815) . plementary to 2SC1624 and 2SC1625. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage 2SA814 2SA815 Collector- Emitter Voltage 2SA814 2SA815 Emitter-Base Voltage Collector Current Emitter Current Collector Power ,_, „_ _. _D.issi. pat. x. on (Tc=25 C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IE Pc Tj Tstg RATING -120 -100 -120 -100 -5 -1 UNIT V V V A A W °C -55VL50...