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2SA815 - Silicon PNP Transistor

Download the 2SA815 datasheet PDF. This datasheet also covers the 2SA814 variant, as both devices belong to the same silicon pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . High Breakdown Voltage: VcEO="120V (2SA814) : VCEO=-100V (2SA815) . Complementary to 2SC1624 and 2SC1625.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SA814_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SA815
Manufacturer Toshiba
File Size 88.51 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA815 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: 2SA814' 2SA81 5, MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SILICON PIMP EPITAXIAL BASE MESA TYPE Unit in mm 10.3 MAX. 0Z6±<2 FEATURES . High Breakdown Voltage: VcEO="120V (2SA814) : VCEO=-100V (2SA815) . Complementary to 2SC1624 and 2SC1625. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector- Base Voltage 2SA814 2SA815 Collector- Emitter Voltage 2SA814 2SA815 Emitter-Base Voltage Collector Current Emitter Current Collector Power ,_, „_ _. _D.issi. pat. x. on (Tc=25 C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IE Pc Tj Tstg RATING -120 -100 -120 -100 -5 -1 1 15 UNIT V V V A A W 150 °C -55VL50 °c 1. BASE 2. COLLECTOR (HEAT SINK) 3. EM ITTER JEDEC TOSHIBA T0-220AB SC-46 2-10A1A Mounting Kit No.