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SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS
FEATURES • High Breakdown Voltage : . Complementary to 2SC1626,
V CEO =-80V
10.3 MAX.
Unit in mm
03.6 ±0.2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
V CBO
Collector-Emitter Voltage 'CEO
Emitter-Base Voltage
EBO
Collector Current
Emitter Current
Collector Power Dissipation (Ta=25°C)
Junction Temperature
Storage Temperature Range T stg
RATING -80 -80 -5
-750 750
1.5
150
-55^ 150
UNIT V
mA mA
°C °C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
i. BASE 2. COLLECTOR (HEAT SINK; 3. EMITTER
TO-220AB
TOSHIBA
2— IOAIA
Mounting Kit No. AC75 Weight : 1.
2SA816 Datasheet
