Datasheet Summary
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.) : Gp = 11.8dB (Min.) : ηC = 35% (Min.)
Intermodulation Distortion : IMD =
- 30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 45 45 18 4 20 175 175
..
UNIT V V V V A...
