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HG Semiconductors
HG RF POWER TRANSISTOR
2SC2290
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 60W PEP (Min.)
Power Gain
: Gp = 11.8dB (Min.)
Collector Efficiency
ηC: = 35% (Min.)
Intermodulation Distortion : IMD = 30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage C ollector C urrent Collector Power Dissipation Junction T em perature Storage Temperature Range
SYMBOL
RATING
UNIT
V CBO V CES VCEO
V EBO IC CP Tj T stg
45 45
18 4 20 175 175 65~175
V V
V V A
W °C °C
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
JEDEC EIAJ TOSHIBA Weight: 5.
2SC2290 Datasheet
