2SC2290 Description
HG Semiconductors HG RF POWER TRANSISTOR 2SC2290 ROHS pliance,Silicon NPN POWER TRANSISTOR Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W PEP (Min.) Power Gain : Gp = 11.8dB (Min.) Collector Efficiency ηC:.
- Part: 2SC2290
- Manufacturer: HGSemi
- Size: 292.07 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SC2290 | Silicon NPN Epitaxial Planar Type Transistor |
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Toshiba |
2SC2290A | Silicon NPN epitaxial planar type Transistor |