2SC2290A - Silicon NPN epitaxial planar type Transistor

Toshiba

Datasheet Details

Part number	2SC2290A
Manufacturer	Toshiba
File Size	197.20 KB
Description	Silicon NPN epitaxial planar type Transistor
Datasheet	2SC2290A Datasheet

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2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.) : Gp = 11.8dB (Min.) : ηC = 35% (Min.) Intermodulation Distortion : IMD = −30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 45 45 18 4 20 175 175 www.DataSheet4U.com UNIT V V V V A W °C °C −65~175 JEDEC EIAJ TOSHIBA Weight: 5.