2SC2290A
2SC2290A is Silicon NPN epitaxial planar type Transistor manufactured by Toshiba.
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.) : Gp = 11.8d B (Min.) : ηC = 35% (Min.)
Intermodulation Distortion : IMD =
- 30d B (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCES VCEO VEBO IC PC Tj Tstg RATING 45 45 18 4 20 175 175
..
UNIT V V V V A W °C °C
- 65~175
JEDEC EIAJ TOSHIBA Weight: 5.2g
- - 2- 13B1A
MARKING
2SC2290
JAPAN
TOSHIBA
Dot Lot No.
2005-03-09
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Output Capacitance Power Gain Input Power Collector Efficiency Intermodulation Distortion Series Equivalent Input Impedance Series Equivalent Output Impedance SYMBOL V (BR) CEO V (BR) CES V (BR) EBO h FE Cob Gp Pi ηC IMD Zin Zout VCC = 12.5V, f1 = 28.000MHz, f2 = 28.001MHz Po = 60WPEP TEST CONDITION IC = 100m A, IB = 0 IC = 100m A, VEB = 0 IE = 1m A, IC = 0 VCE = 5V, IC = 10A
- VCB = 12.5V, IE = 0 f = 1MHz VCC = 12.5V, f1 = 28.000MHz, f2 = 28.001MHz Iidle = 50m A Po = 60WPEP (Fig.) MIN. 18 45 4 10
- 11.8
- 35
- -
- TYP.
- -
- -
- 13.8 2.5
- - 1.02
- j0.17...
