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2SC3279 Datasheet - Toshiba Semiconductor

2SC3279 NPN TRANSISTOR

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Col.

2SC3279_ToshibaSemiconductor.pdf