Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Audio Frequency Amplifier Applications Switching Applications
- -
- - High hFE: hFE = 600~3600 High voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Small package Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 150 125 -55~125 Unit V V V mA mA mW °C °C
JEDEC JEITA TOSHIBA
TO-236MOD SC-59 2-3F1A
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta =...
