2SC3295 - Silicon NPN Epitaxial Transistor

Datasheet Summary

Features

+0.1 2.4-0.1 High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High collector current: IC = 150 mA (max). Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj.

Kexin

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Datasheet Details

Part number	2SC3295
Manufacturer	Kexin
File Size	54.32 KB
Description	Silicon NPN Epitaxial Transistor
Datasheet	2SC3295 Datasheet
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Full PDF Text Transcription

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SMD Type Silicon NPN Epitaxial 2SC3295 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High collector current: IC = 150 mA (max). Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.

Published: Oct 7, 2013 |