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Toshiba Electronic Components Datasheet

2SC4881 Datasheet

NPN TRANSISTOR

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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC4881
High-Current Switching Applications
2SC4881
Unit: mm
Low saturation voltage: VCE (sat) = 0.4 V (max)
High-speed switching: tstg = 0.8 μs (typ.)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 60 V
Collector-emitter voltage
VCEO 50 V
Emitter-base voltage
VEBO 5 V
Collector current
DC
IC
5
A
Pulse ICP 8
Base current
IB 1 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
20
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2006-11-10


Toshiba Electronic Components Datasheet

2SC4881 Datasheet

NPN TRANSISTOR

No Preview Available !

Electrical Characteristics (Tc = 25°C)
2SC4881
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 50 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 1 V, IC = 1 A
VCE = 1 V, IC = 2.5 A
IC = 2.5 A, IB = 125 mA
IC = 2.5 A, IB = 125 mA
VCB = 4 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
ton
20 μs Input IB1
Output
tstg IB2
VCC = 30 V
tf
IB1 = IB2 = 125 mA, duty cycle 1%
Min Typ. Max Unit
― ― 1 μA
― ― 1 μA
50 ― ―
V
100 320
60 ― ―
0.25 0.4
V
1.0 1.3
V
100 MHz
45 pF
0.1
0.8
μs
0.1
Marking
C4881
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
http://store.iiic.cc/
2006-11-10


Part Number 2SC4881
Description NPN TRANSISTOR
Maker Toshiba Semiconductor
PDF Download

2SC4881 Datasheet PDF






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