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2SC6026 - Silicon NPN Transistor

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Part number 2SC6026
Manufacturer Toshiba Semiconductor
File Size 163.17 KB
Description Silicon NPN Transistor
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2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications • • • • • www.DataSheet4U.com Unit: mm 0.15±0.05 High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 0.6±0.05 0.35±0.05 High hFE Lead (Pb) free : hFE = 120~400 Complementary to 2SA2154 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 100 30 50 150 −55~150 Unit V V V mA mA mW °C °C 0.48 -0.04 +0.02 0.1±0.
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