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2SC6026CT
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC6026CT
General Purpose Amplifier Applications
High voltage and high current
: VCEO = 50V, IC = 100mA (max)
Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.)
High hFE
: hFE = 120 to 400
Complementary to 2SA2154CT
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current Collector power dissipation
IB
30
mA
PC (Note1)
100
mW
CST3
1.BASE 2.EMITTER 3.COLLECTOR
Junction temperature Storage temperature range
Tj
150
°C
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g.
2SC6026CT Datasheet
