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2SC6026
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
General-Purpose Amplifier Applications
• • • • •
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Unit: mm
0.15±0.05
High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
0.6±0.05
0.35±0.05
High hFE Lead (Pb) free
: hFE = 120~400
Complementary to 2SA2154
1 3 2 0.8±0.05 1.0±0.05 0.1±0.05
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 100 30 50 150 −55~150 Unit V V V mA mA mW °C °C
0.48 -0.04
+0.02
0.1±0.
2SC6026 Datasheet
