Datasheet Summary
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
General-Purpose Amplifier Applications
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Unit: mm
0.15±0.05
High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
0.6±0.05
0.35±0.05
High hFE Lead (Pb) free
: hFE = 120~400 plementary to 2SA2154
1 3 2 0.8±0.05 1.0±0.05 0.1±0.05
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50...
