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2SC6026MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026MFV
General-Purpose Amplifier Applications
• High voltage and high current
: VCEO = 50 V, IC = 150 mA (max)
• Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• High hFE
: hFE = 120 to 400
• Complementary to 2SA2154MFV
Absolute Maximum Ratings (Ta = 25°C)
1.2 ± 0.05
0.8 ± 0.05 0.4 0.4
0.22 ± 0.05
1.2 ± 0.05 0.80 ± 0.05
Unit: mm
0.32 ± 0.05
1
1
3 2
0.13 ± 0.05
Characteristic
Symbol
Rating
Unit
0.5 ± 0.05
Collector-base voltage
VCBO
60
V
Collector-emitter voltage Emitter-base voltage Collector current Base current
VCEO VEBO
IC IB
50
V
5
V
150
mA
30
mA
VESM
1.BASE 2.EMITTER 3.
2SC6026MFV Datasheet
