Full PDF Text Transcription for 2SK1829 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SK1829. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1829 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage...
View more extracted text
Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package Marking Equivalent Circuit 2SK1829 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 50 100 150 −55 to 150 Unit V V mA mW °C °C JEDEC ― JEITA SC-70 TOSHIBA 2-2E1E Weight: 0.006 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
2SK1829 Datasheet
