900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

2SK2201 Datasheet

Silicon N-Channel MOS Type Field Effect Transistor

No Preview Available !

2SK2201
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L2−π−MOSV)
2SK2201
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
Unit: mm
z 4 V gate drive
z Low drainsource ON-resistance
: RDS (ON) = 0.28 (typ.)
z High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±20
3
12
20
140
3
2
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Rth (chc)
6.25 °C / W
JEDEC
Thermal resistance, channel to
ambient
Rth (cha)
125 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25 mH, RG = 25 , IAR = 3 A
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-20


Toshiba Electronic Components Datasheet

2SK2201 Datasheet

Silicon N-Channel MOS Type Field Effect Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SK2201
Characteristic
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 4 V, ID = 2 A
VGS = 10 V, ID = 2 A
VDS = 10 V, ID = 2 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Min Typ. Max Unit
— — ±10 μA
— — 100 μA
100 —
V
0.8 — 2.0
V
— 0.36 0.45
— 0.28 0.35
1.5 3.5
S
— 280 —
— 50 — pF
— 105 —
— 20 —
Switching time
Turnon time
Fall time
ton
tf
— 50 —
ns
— 40 —
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
toff
Qg
Qgs VDD 80 V, VGS = 10 V, ID = 3 A
Qgd
— 170 —
— 13.5 —
— 8.5 —
—5—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 3 A, VGS = 0 V
IDR = 3 A, VGS = 0 V, dIDR / dt = 50 A / μs
Min Typ. Max Unit
—— 3 A
— — 12 A
— — 1.5 V
— 100 —
ns
— 0.2 — μC
Marking
K2201
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-20


Part Number 2SK2201
Description Silicon N-Channel MOS Type Field Effect Transistor
Maker Toshiba Semiconductor
PDF Download

2SK2201 Datasheet PDF






Similar Datasheet

1 2SK2200 Silicon N Channel MOS Type Field Effect Transistor
Toshiba Semiconductor
2 2SK2201 Silicon N-Channel MOS Type Field Effect Transistor
Toshiba Semiconductor
3 2SK2202 Silicon N-Channel MOS FET
Hitachi Semiconductor
4 2SK2203 Silicon N-Channel MOS FET
Hitachi Semiconductor
5 2SK2207 MOSFET
Sanken electric
6 2SK2208 MOSFET
Sanken electric
7 2SK2209-01R Power MOSFET
Fuji Electric





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy