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2SK2613
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII)
2SK2613
Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
· · · · Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ïYfsï = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 1000 1000 ±30 8 24 150 910 8 15 150 -55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3.
2SK2613 Datasheet
