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2SK2611 - Silicon N-Channel MOSFET

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Datasheet Details

Part number 2SK2611
Manufacturer Toshiba
File Size 475.26 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK2611 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2611 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement−mode : RDS (ON) = 1.2 Ω (typ.) : |Yfs| = 7.0 S (typ.) Unit: mm : IDSS = 100 μA (max) (VDS = 720 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 9 27 150 663 9 15 150 −55 to 150 www.DataSheet.net/ Unit V V V A A W 1. GATE 2. DRAIN (HEAT SINK) 3.