- Part: 2SK2613
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Toshiba
- Size: 251.64 KB
Key Features
- Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ïYfsï = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Datasheets by Manufacturer
| Part Number |
Manufacturer |
Description |
|
2SK2611
|
WINSEMI SEMICONDUCTOR |
Silicon N-Channel MOSFET |
|
2SK2611
|
Nell Power Semiconductor |
N-Channel Power MOSFET |