• Part: 2SK2613
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Toshiba
  • Size: 251.64 KB
2SK2613 Datasheet (PDF) Download
Toshiba
2SK2613

Key Features

  • Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) High forward transfer admittance: ïYfsï = 6.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm