Datasheet4U Logo Datasheet4U.com

2SK2611 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.

Key Features

  • 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet Details

Part number 2SK2611
Manufacturer WINSEMI SEMICONDUCTOR
File Size 538.17 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK2611 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2611 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK2611 N-Channel MOSFET INCHANGE
2SK2611 N-Channel Power MOSFET nELL
2SK2610 N-Channel MOSFET Toshiba Semiconductor
2SK2613 N-Channel MOSFET Toshiba Semiconductor

Other Datasheets by WINSEMI SEMICONDUCTOR

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.in 2SK2611 Silicon N-Channel MOSFET Features � � � � � 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .